NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz宽频带晶体管

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

NPN 14 GHz wideband transistor

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

RF Manual 16th edition

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

RF Manual 16th edition

封装/外壳：SOT-143R 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ SOT143R 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：86.45 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：86.45 Kbytes Page：12 Pages

NPN 14 GHz宽频带晶体管

NPN 14 GHz wideband transistor

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 6V 14GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 14 GHz wideband transistor

文件：93.48 Kbytes Page：12 Pages

NPN 14 GHz wideband transistor

文件：93.48 Kbytes Page：12 Pages

High Temperature and Ultra-Low ESR

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