N-channel dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Specially de

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 7V 30MA SOT343 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SC-82A，SOT-343 包装：管件 描述：MOSFET N-CH 7V 30MA SOT343 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOS-FET

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N-channel dual-gate MOS-FET

文件：91.77 Kbytes Page：12 Pages

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

NYLON TUBE SPACERS

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NYLON TUBE SPACERS

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M12?륚 Die Cast Passive I/O Box

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Flexible, low cost and high performance

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