PNP high-voltage transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.

SILICON EPITAXIAL TRANSISTORS

SILICON EPITAXIAL TRANSISTORS P–N–P transistors SOT-23 Formed SMD Package

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP high-voltage transistors

丝印代码：1Y；Small Signal Transistors (PNP)

FEATURES ◆ PNP Silicon Epitaxial Planar Transistors especially suited for application in classB video output stages of TV receivers and monitors. ◆ As complementary types, the NPN transistors BF820 and BF822 are recommended.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low current (max.-50 mA) ● High voltage (max.-300V) ● Telephony and professional communication equipment.

PNP High-Voltage Transistors

Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).

丝印代码：1Y；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current (max.-50 mA) High voltage (max.-300V) Telephony and professional communication equipment.

丝印代码：1Y；PNP high-voltage transistors

FEATURES •Low current (max. 50 mA) •High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822.

SOT-23 - Power Transistor and Darlingtons

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双极型晶体管

250V,0.05A,General Purpose PNP Bipolar Transistor

晶体管

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 250V 0.05A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit Low Voltage Audio Amplifier

Description: The NTE823 is an audio power amplifier in an 8–Lead DIP type package designed for use in low volt age consumer applications.