N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

RF Manual 16th edition

RF Manual 16th edition

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

RF Manual 16th edition

N沟道FET

N沟道FET

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：JFET N-CH 30V 15MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频

N沟道FET

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：JFET N-CH 30V 25MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频

CE conformity

FEATURES J J I4 « CE conformity * Built to meet European Standard BS EN 60335-2-45 ! * Full power range from 12 to 50 watt * Wide choice of input voltages * “Thermally balanced” fixed setting and “In Handle” adjustable temperature models * Wide range of soldering and desoldering-b

545 provides the following product characteristics

文件：79.47 Kbytes Page：3 Pages

DOLBY-B NOISE PROCESSOR

文件：974.5 Kbytes Page：20 Pages

GaAs MMIC SPDT SWITCH, DC - 3 GHz

文件：199.85 Kbytes Page：6 Pages

TO-8 CASCADABLE AMPLIFIERS

文件：176.97 Kbytes Page：2 Pages