Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

●ForRFstagesupto300MHzpreferablyinFMapplications ●IDSS=4mA,gfs=12mS

Silicon N-Channel MOSFET Triode

●Forhigh-frequencystagesupto300MHzpreferablyinFMapplications ●IDSS=4mA,gfs=12mS

N-Channel MOS-Fieldeffect Triode, Depletion Mode

Features •Integratedgateprotectiondiode •Lowfeedbackcapacitance •Lownoisefigure •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Highfrequencystagesupto300MHz.  

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

NPN 1 GHz wideband transistor

FEATURES •Feedbackcapacitancetyp.1pF •Stableoscillatoroperation •Highcurrentgain •Goodthermalstability. APPLICATIONS •ItisintendedforVHFandUHFTV-tunerapplicationsandcanbeusedasamixerand/oroscillator.

NPN 1 GHz wideband transistor

DESCRIPTION SiliconNPNtransistorinaplasticSOT323(S-mini)package.TheBF547WusesthesamecrystalastheSOT23version,BF547. FEATURES •Stableoscillatoroperation •Highcurrentgain •Goodthermalstability. APPLICATIONS Itisprimarilyintendedasamixer,oscillatorandIF

Surface mount balun filter with a small size of 2.0 X 1.2 X 0.9 mm, RoHS compliant.

文件：279.91 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：JFET N-CH 30V 15MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：JFET N-CH 30V 25MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频