丝印代码：LRs；NPN Silicon RF Transistor

NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners • Pb-free (RoHS compliant) package

NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners)

NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners

RF-Bipolar - For amplifier and oscillator applications in TV-tuners

丝印代码：LRs；NPN Silicon RF Transistor

文件：70.53 Kbytes Page：7 Pages

丝印代码：LRs；NPN Silicon RF Transistor

文件：521.5 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：70.53 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：521.5 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：521.5 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 15V 0.025A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.