NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR THE BF173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES.

General Purpose Diodes

General Purpose Diodes

Electrical characterlitics

General Purpose Diodes

Trans GP BJT 25V 30A

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

Programmable logic array 22 횞 42 횞 10

DESCRIPTION The PLS173 is a two-level logic element consisting of 42 AND gates and 10 OR gates with fusible link connections for programming I/O polarity and direction. All AND gates are linked to 12 inputs (I) and 10 bidirectional I/O lines (B). These yield variable I/O gate configurations

Programmable logic arrays 22 횞 42 횞 10

DESCRIPTION The PLUS173 PLDs are high speed, combinatorial Programmable Logic Arrays. The Philips Semiconductors state-of-the-art Oxide Isolated Bipolar fabrication process is employed to produce propagation delays as short as 12ns. FEATURES • I/O propagation delays (worst case) – PLUS173B

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The PPG173TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 25 mA low current operation. It is housed in a very small 6 pin mini-mold package available on