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BF121晶体管资料

  • BF121别名：BF121三极管、BF121晶体管、BF121晶体三极管

  • BF121生产厂家：德国椤茨标准电器公司

  • BF121制作材料：Si-NPN

  • BF121性质：调幅 （AM）_调频 （FM）_前置放大 （V）

  • BF121封装形式：特殊封装

  • BF121极限工作电压：

  • BF121最大电流允许值：

  • BF121最大工作频率：350MHZ

  • BF121引脚数：4

  • BF121最大耗散功率：

  • BF121放大倍数：

  • BF121图片代号：G-178

  • BF121vtest：0

  • BF121htest：350000000

  • BF121atest：0

  • BF121wtest：0

  • BF121代换 BF121用什么型号代替：BF167,BF198,BF225,BF310,BF367,BF596,3DG110F,

BF121价格

参考价格：￥1.0478

型号：BF1211,215 品牌：NXP 备注：这里有BF121多少钱，2024年最近7天走势，今日出价，今日竞价，BF121批发/采购报价，BF121行情走势销售排行榜，BF121报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BF121

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF1210

DualN-channeldualgateMOSFET

Generaldescription TheBF1210isacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leads. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcrossmodulationperformanceduringAGC.Integrateddiodesbetweenth

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF1210

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1211

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1211

N-channeldual-gateMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF1211R

N-channeldual-gateMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF1211R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1211WR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1211WR

N-channeldual-gateMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF1212

N-channeldual-gateMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF1212

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1212R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1212R

N-channeldual-gateMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF1212WR

N-channeldual-gateMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BF1212WR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1214

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1215

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1216

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1217

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1217WR

N-channeldualgateMOSFET

Productprofile 1.1Generaldescription EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrate interconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessive inputvoltagesurges.TheBF1217WRisencapsulatedintheSOT343Rplasticpackage. 1.2Fe

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1218

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1210

DualN-channeldualgateMOSFET

文件：260.18 Kbytes Page：21 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1210_15

DualN-channeldualgateMOSFET

文件：260.18 Kbytes Page：21 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
BF1210_2015

DualN-channeldualgateMOSFET

文件：260.18 Kbytes Page：21 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
BF121-04-A-0-L-A

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-L-B

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-L-C

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-L-D

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-L-E

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-L-F

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-N-A

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-N-B

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-N-C

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-N-D

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-N-E

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-0-N-F

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-L-A

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-L-B

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-L-C

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-L-D

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-L-E

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-L-F

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-N-A

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-N-B

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-N-C

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-N-D

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-N-E

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-04-A-1-N-F

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF121-06-A-0-L-C

2.00mmPitchSocketDualRow,SurfaceMount,DualEntry

文件：90.82 Kbytes Page：1 Pages

GCT

GCT Semiconductor

GCT
BF1211,215

封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：MOSFET N-CH DUAL GATE 6V SOT143B 分立半导体产品 晶体管 - FET，MOSFET - 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1211_15

N-channeldual-gateMOS-FETs

文件：119.34 Kbytes Page：15 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
BF1211_2015

N-channeldual-gateMOS-FETs

文件：119.34 Kbytes Page：15 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
BF1211R,215

封装/外壳：SOT-143R 包装：托盘 描述：MOSFET N-CH DUAL GATE 6V SOT143R 分立半导体产品 晶体管 - FET，MOSFET - 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1212_15

N-channeldual-gateMOS-FETs

文件：136.76 Kbytes Page：15 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
BF1212_2015

N-channeldual-gateMOS-FETs

文件：136.76 Kbytes Page：15 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
BF1214

DualN-channeldualgateMOSFET

文件：211.02 Kbytes Page：18 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BF1214_15

DualN-channeldualgateMOSFET

文件：218.93 Kbytes Page：18 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
BF1214_2015

DualN-channeldualgateMOSFET

文件：218.93 Kbytes Page：18 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
121

PrecisionWirewoundResistors

100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst

Riedon

Riedon Inc.

Riedon
121

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

PRODUCTWELLProductwell Precision Elect.CO.,LTD

寶德華股台灣寶德華股有限公司

PRODUCTWELL

BF121产品属性

  • 类型

    描述

  • 型号

    BF121

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    Dual N-channel dual gate MOSFET

BF121供应商更多...

更新时间：2024-6-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
BF1211WR
NXP(恩智浦)
23+
标准封装
17048
全新原装正品/价格优惠/质量保障
询价
深圳市得捷芯城科技有限公司
BF1212R
NXP(恩智浦)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市凌旭科技有限公司
BF1214
NXP
2016+
SOT363
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市纳艾斯科技有限公司
BF1211WR
NXP
2020+
SOT343
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市科恒伟业电子有限公司
BF1212WR
NXP/恩智浦
22+
SOT343
8550
只做原装正品假一赔十!正规渠道订货!
询价
深圳市明嘉莱科技有限公司
BF1217WR
NXP/恩智浦
24+
SOT343
860000
明嘉莱只做原装正品现货
询价
深圳市华睿芯科技有限公司
BF1212WR
23+
SOT-143
20000
原厂原装正品现货
询价
深圳市科芯源微电子有限公司
BF1212WR
NXP/恩智浦
23+
SOT-343
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市威雅利发展有限公司
BF1217WR
NXP
12+
SOT343
24000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳廊盛科技有限公司
BF1217WR
NXP/恩智浦
2022
SOT343
80000
原装现货,OEM渠道,欢迎咨询
询价

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BF121规格书下载地址

BF121参数引脚图相关

BF121数据表相关新闻

DdatasheetPDF页码索引

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