型号 功能描述 生产厂家&企业 LOGO 操作
BES01N6

Inductive Sensors

BES 517-398-NO-C-05 Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

Balluff

巴鲁夫

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

文件:85.87 Kbytes Page:4 Pages

CET

华瑞

更新时间:2025-8-17 11:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
BES
23+
QFN
50000
只做原装正品
BESTRELY
24+
BGA
9000
只做原装正品 有挂有货 假一赔十
BES
23+
QFN
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
BES
20+
QFN
34
原装
24+
N/A
80000
一级代理-主营优势-实惠价格-不悔选择
BORN
22+
DFN2×2-3L
25000
伯恩全系列在售
NEC
2447
LQFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SAMSUNG
1922+
NA
35689
原装进口现货库存专业工厂研究所配单供货
24+
36000
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业

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