型号 功能描述 生产厂家 企业 LOGO 操作
BES01N6

Inductive Sensors

BES 517-398-NO-C-05 Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

Balluff

巴鲁夫

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:85.87 Kbytes Page:4 Pages

CET

华瑞

更新时间:2025-12-29 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
BES
23+
QFN
50000
只做原装正品
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
APPLIED MATERIALS (AMAT)
25+
80
公司优势库存 热卖中!
CHINAXYJ
23+
1608
9868
专做原装正品,假一罚百!
BES
25+
BGA
15000
全新原装现货,价格优势
BES
2450+
BGA
6540
只做原装正品假一赔十为客户做到零风险!!
BES
22+
QFN
8000
原装正品支持实单
24+
36000
BESTRELY
24+
BGA
9000
只做原装正品 有挂有货 假一赔十
BORN
22+
DFN2×2-3L
25000
伯恩全系列在售

BES01N6数据表相关新闻