| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BES01N6 | InductiveSensors BES517-398-NO-C-05 Basicfeatures Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2 | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 |  |   |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：85.87 Kbytes Page：4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BES |
23+ |
QFN |
50000 |
只做原装正品 |
|||
CHINAXYJ |
23+ |
1608 |
9868 |
专做原装正品,假一罚百! |
|||
N/S |
21+ |
QFN |
5000 |
全新原装现货 价格优势 |
|||
BESTRELY |
22+ |
BGA |
10000 |
绝对原装现货热卖 |
|||
BES |
22+ |
QFN |
8000 |
原装正品支持实单 |
|||
BES |
1736+ |
QFN |
8298 |
只做进口原装正品假一赔十! |
|||
36000 |
|||||||
APPLIED MATERIALS (AMAT) |
NDC |
80 |
公司优势库存 热卖中! |
||||
BORN |
24+25+/26+27+ |
DFN-2.贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
BES |
20+ |
QFN |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
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DdatasheetPDF页码索引
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