型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BES01N6 | Inductive Sensors BES 517-398-NO-C-05 Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2 | Balluff 巴鲁夫 | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:85.87 Kbytes Page:4 Pages | CET 华瑞 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
BES |
23+ |
QFN |
50000 |
只做原装正品 |
|||
BESTRELY |
24+ |
BGA |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
BES |
23+ |
QFN |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
BES |
20+ |
QFN |
34 |
原装 |
|||
24+ |
N/A |
80000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
BORN |
22+ |
DFN2×2-3L |
25000 |
伯恩全系列在售 |
|||
NEC |
2447 |
LQFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG |
1922+ |
NA |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
24+ |
36000 |
||||||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
BES01N6规格书下载地址
BES01N6参数引脚图相关
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- BES01KT
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DdatasheetPDF页码索引
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