BD648晶体管资料

  • BD648别名:BD648三极管、BD648晶体管、BD648晶体三极管

  • BD648生产厂家:德国AEG公司_德国西门子AG公司_德国凡尔伏公司

  • BD648制作材料:Si-P+Darl+Di

  • BD648性质:低频或音频放大 (LF)_功率放大 (L)

  • BD648封装形式:直插封装

  • BD648极限工作电压:80V

  • BD648最大电流允许值:8A

  • BD648最大工作频率:<1MHZ或未知

  • BD648引脚数:3

  • BD648最大耗散功率:62.5W

  • BD648放大倍数

  • BD648图片代号:B-10

  • BD648vtest:80

  • BD648htest:999900

  • BD648atest:8

  • BD648wtest:62.5

  • BD648代换 BD648用什么型号代替:BD700,BD900,BDW74B,BDX34B,BDX54B,FC50B,

型号 功能描述 生产厂家&企业 LOGO 操作
BD648

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

POINN

Power Innovations Ltd

BD648

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BD645, BD647, BD649 AND BD651 • 62.5 W at 25°C Case Temperture • 8 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 3 A

TRSYS

Transys Electronics

BD648

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

SIEMENS

西门子

BD648

PNP SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

SIEMENS

西门子

BD648

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications

SAVANTIC

BD648

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

COMSET

BD648

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

Bourns

伯恩斯

BD648

isc Silicon PNP Darlington Power Transistor

文件:108.11 Kbytes Page:2 Pages

ISC

无锡固电

BD648

SILICON DARLINGTON POWER TRANSISTORS

文件:111.79 Kbytes Page:5 Pages

COMSET

BD648

Silicon NPN Power Transistors

文件:95.95 Kbytes Page:3 Pages

SAVANTIC

isc Silicon PNP Darlington Power Transistor

文件:279.76 Kbytes Page:2 Pages

ISC

无锡固电

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS PNP DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

AD

亚德诺

MINIATURE FUSEHOLDERS

文件:113.57 Kbytes Page:1 Pages

Littelfuse

力特

General Purpose Tweezers

文件:3.67611 Mbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

General Purpose Tweezers

文件:3.67611 Mbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

600H and 600NH series

文件:324.88 Kbytes Page:8 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BD648产品属性

  • 类型

    描述

  • 型号

    BD648

  • 功能描述

    达林顿晶体管 62.5W PNP Silicon

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-8-13 17:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
BGA
990000
明嘉莱只做原装正品现货
ST/PHI
1738+
TO-220
8529
科恒伟业!只做原装正品,假一赔十!
恩XP
23+
TO-220
5000
专注配单,只做原装进口现货
N/A
25+
BGA
3000
原装正品,假一罚十!
ROHM/罗姆
23+
BGA
9546
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ST
25+
TO-220
16900
原装,请咨询
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
24+
TO-220
10000
全新
ST
23+
TO-220
16900
正规渠道,只有原装!
ST/进口原
17+
TO-220
6200

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