BD540晶体管资料
BD540别名：BD540三极管、BD540晶体管、BD540晶体三极管
BD540生产厂家：美国得克萨斯仪表公司
BD540制作材料：Si-PNP
BD540性质：低频或音频放大 （LF）_功率放大 （L）
BD540封装形式：直插封装
BD540极限工作电压：120V
BD540最大电流允许值：5A
BD540最大工作频率：<1MHZ或未知
BD540引脚数：3
BD540最大耗散功率：45W
BD540放大倍数：
BD540图片代号：B-10
BD540vtest：120
BD540htest：999900
- BD540atest：5
BD540wtest：45
BD540代换 BD540用什么型号代替：BD244,BD544,BD596,3CD50B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD540 | PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 |   | |
BD540 | isc Silicon PNP Power Transistor DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) • Complement to Type BD539 APPLICATIONS • Designed for use in medium power linear and switching applications. | ISC 无锡固电 | | |
BD540 | PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | |
BD540 | Trans GP BJT PNP 40V 5A 3-Pin(3+Tab) TO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD540 | Silicon PNP Power Transistor 文件：129.62 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Complement to Type BD539A APPLICATIONS • Designed for use in medium power linear and switching applications. | ISC 无锡固电 | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Complement to Type BD539B APPLICATIONS • Designed for use in medium power linear and switching applications. | ISC 无锡固电 | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in l | PANJIT 強茂 | | ||
PNP SILICON POWER TRANSISTORS | POINN | | ||
TRANS PNP 60V 5A | BOURNS 伯恩斯 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 60V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 80V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
isc Silicon PNP Power Transistor 文件：249.86 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：469.67 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：469.67 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：469.67 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
5.0 A SCHOTTKY BARRIER DIODE 文件：146.78 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：79.34 Kbytes Page：2 Pages | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：336.49 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：336.49 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：336.49 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
丝印代码：-MG；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency | PHILIPS 飞利浦 | | ||
Octal buffer/line driver; 3-state; inverting GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI | PHILIPS 飞利浦 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca | PANJIT 強茂 | |
BD540产品属性
- 类型
描述
- Configuration：
Single
- Material：
Si
- Maximum Collector Base Voltage：
40V
- Maximum Collector Emitter Saturation Voltage：
\\0.25@0.125A@1A0.8@0.375A@3A
- Maximum Collector Emitter Voltage：
40V
- Maximum DC Collector Current：
5A
- Maximum Emitter Base Voltage：
5V
- Maximum Operating Temperature：
150°C
- Maximum Power Dissipation：
45000mW
- Type：
PNP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOURNS |
2026+ |
TO-220 |
400 |
原装正品 假一罚十! |
|||
ST |
22+ |
TO-220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
PANJIT |
25+23+ |
TO-252(DP |
21463 |
绝对原装正品全新进口深圳现货 |
|||
PANJIT/强茂 |
23+ |
TO-252 |
50000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Littelfuse(美国力特) |
2447 |
Radial |
115000 |
200个/袋一级代理专营品牌!原装正品,优势现货,长期 |
|||
PANJIT |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
22+ |
TO-220 |
90218 |
||||
DIODES |
24+ |
SOD-1231206 |
57200 |
新进库存/原装 |
|||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
BD540规格书下载地址
BD540参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BD546
- BD545S
- BD545D
- BD545C
- BD545B
- BD545A
- BD545
- BD544D
- BD544C
- BD544B
- BD544A
- BD544
- BD543D
- BD543C
- BD543B
- BD543A
- BD543
- BD540YT
- BD540YS
- BD540T
- BD540S
- BD540D
- BD540C
- BD540B
- BD540A
- BD53XXG
- BD53XX
- BD53E60
- BD53E59
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- BD53E56
- BD53E55
- BD53E54
- BD53E53
- BD53E52
- BD53E51
- BD53E50
- BD53E49
- BD53E48
- BD53E47
- BD53E46
- BD53E45
- BD53E44
- BD53E43
- BD539D
- BD539C
- BD539B
- BD539A
- BD539
- BD538(J,K)
- BD537(J,K)
- BD536(J,K)
- BD535(J,K)
- BD534(J,K,L)
- BD533...538A
- BD533(J,K,L)
- BD530(-1,-5)
- BD529(-1,-5)
- BD528(-1,-5)
- BD527(-1,-5)
- BD526(-1,-5)
- BD525(-1,-5)
- BD524
- BD520(-1,-5)
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2020-6-4BD63241FV-E2
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-25BD4F5FSLS33-缓冲器/驱动器
LSI逻辑公司提供以下驱动器/接收器输入/输出（的I / O），作为一般用途的I / O缓冲器细胞： •bd4f5fsls33 •bd4puf5fsls33 •bd4puodf5fsls33 •bd4puodf5fscls33 该I / O缓冲器提供芯片外，双向I/ O的applicationspecific信号集成电路（ASIC）的LSI逻辑芯片实现G12号™- P的0.13微米工艺技术。具有类似功能的I / O缓冲器提供一个不同的驱动程序选项的ASIC应用。
2013-3-5
DdatasheetPDF页码索引
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