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BD540A晶体管资料
BD540A别名:BD540A三极管、BD540A晶体管、BD540A晶体三极管
BD540A生产厂家:美国得克萨斯仪表公司
BD540A制作材料:Si-PNP
BD540A性质:低频或音频放大 (LF)_功率放大 (L)
BD540A封装形式:直插封装
BD540A极限工作电压:60V
BD540A最大电流允许值:5A
BD540A最大工作频率:<1MHZ或未知
BD540A引脚数:3
BD540A最大耗散功率:45W
BD540A放大倍数:
BD540A图片代号:B-10
BD540Avtest:60
BD540Ahtest:999900
- BD540Aatest:5
BD540Awtest:45
BD540A代换 BD540A用什么型号代替:BD244A,BD544A,BD598,3CD50C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD540A | PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | ||
BD540A | PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | ||
BD540A | isc Silicon PNP Power Transistor DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Complement to Type BD539A APPLICATIONS • Designed for use in medium power linear and switching applications. | ISC 无锡固电 | ||
BD540A | PNP SILICON POWER TRANSISTORS | POINN | ||
TRANS PNP 60V 5A | BOURNS 伯恩斯 | |||
封装/外壳:TO-220-3 包装:管件 描述:TRANS PNP 60V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
丝印代码:-MG;NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | PHILIPS 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency | PHILIPS 飞利浦 | |||
Octal buffer/line driver; 3-state; inverting GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI | PHILIPS 飞利浦 | |||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity | PANJIT 強茂 | |||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca | PANJIT 強茂 |
BD540A产品属性
- 类型
描述
- 型号
BD540A
- 功能描述
两极晶体管 - BJT 45W PNP Silicon
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-220 |
20000 |
原装,请咨询 |
|||
24+ |
TO-220 |
10000 |
全新 |
||||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
pi |
25+ |
500000 |
行业低价,代理渠道 |
||||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
Bourns Inc. |
25+ |
TO-220 |
20948 |
样件支持,可原厂排单订货! |
|||
Bourns Inc. |
25+ |
TO-220 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
25+ |
TO-220 |
20000 |
原装 |
|||
BOURNS |
2026+ |
TO-220 |
400 |
原装正品 假一罚十! |
|||
恩XP |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
BD540A规格书下载地址
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LSI逻辑公司提供以下驱动器/接收器输入/输出(的I / O),作为一般用途的I / O缓冲器细胞: •bd4f5fsls33 •bd4puf5fsls33 •bd4puodf5fsls33 •bd4puodf5fscls33 该I / O缓冲器提供芯片外,双向I/ O的applicationspecific信号集成电路(ASIC)的LSI逻辑芯片实现G12号™- P的0.13微米工艺技术。具有类似功能的I / O缓冲器提供一个不同的驱动程序选项的ASIC应用。
2013-3-5
DdatasheetPDF页码索引
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