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型号 功能描述 生产厂家 企业 LOGO 操作
BD243BG

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

BD243BG

Complementary Silicon Plastic Power Transistors

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ONSEMI

安森美半导体

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

MOSPEC

统懋

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

MOTOROLA

摩托罗拉

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

MOTOROLA

摩托罗拉

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

MOSPEC

统懋

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

MOSPEC

统懋

BD243BG产品属性

  • 类型

    描述

  • 型号

    BD243BG

  • 功能描述

    两极晶体管 - BJT 6A 80V 65W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

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