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BCR166晶体管资料

  • BCR166别名:BCR166三极管、BCR166晶体管、BCR166晶体三极管

  • BCR166生产厂家

  • BCR166制作材料:Si-P+R

  • BCR166性质:表面帖装型 (SMD)

  • BCR166封装形式:贴片封装

  • BCR166极限工作电压:50V

  • BCR166最大电流允许值:0.1A

  • BCR166最大工作频率:<1MHZ或未知

  • BCR166引脚数:3

  • BCR166最大耗散功率

  • BCR166放大倍数

  • BCR166图片代号:H-15

  • BCR166vtest:50

  • BCR166htest:999900

  • BCR166atest:0.1

  • BCR166wtest:0

  • BCR166代换 BCR166用什么型号代替:DTA143ZK,KSR2114,RN2406,2SA1597,

BCR166价格

参考价格:¥0.1150

型号:BCR166E6327 品牌:INF 备注:这里有BCR166多少钱,2026年最近7天走势,今日出价,今日竞价,BCR166批发/采购报价,BCR166行情走势销售排行榜,BCR166报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCR166

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ)

SIEMENS

西门子

BCR166

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )

INFINEON

英飞凌

BCR166

Digital Transistor(PNP)

Features « Built bias resistors « making device design easy « almost completely eliminating parasitic effects

TECHPUBLIC

台舟电子

BCR166

AF 数字晶体管

PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• 无铅(符合 RoHS 标准)封装\n• 符合 AEC Q101 标准;

INFINEON

英飞凌

BCR166

PNP Silicon Digital Transistor

文件:118.14 Kbytes Page:10 Pages

INFINEON

英飞凌

BCR166

丝印代码:WTs;PNP Silicon Digital Transistor

文件:841.96 Kbytes Page:8 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor

文件:118.14 Kbytes Page:10 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor

文件:841.96 Kbytes Page:8 Pages

INFINEON

英飞凌

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS PREBIAS PNP 0.2W SOT23-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS PREBIAS PNP 200MW SOT23-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

PNP Silicon Digital Transistor

文件:118.14 Kbytes Page:10 Pages

INFINEON

英飞凌

丝印代码:WTs;PNP Silicon Digital Transistor

文件:841.96 Kbytes Page:8 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor

文件:118.14 Kbytes Page:10 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

文件:34.8 Kbytes Page:4 Pages

SIEMENS

西门子

Digital Transistor

INFINEON

英飞凌

Silicon MOS IC

PANASONIC

松下

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

MOTOROLA

摩托罗拉

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

NTE

BCR166产品属性

  • 类型

    描述

  • hFEmin:

    70

  • ICBOmax:

    100 nA

  • Ptotmax:

    200 mW

  • R1 / R2:

    0.1

  • R1:

    4.7 kΩ

  • R2:

    47 kΩ

  • VCBOmax:

    50 V

  • VCE(sat)max:

    0.3 V

  • VCEOmax:

    50 V

  • VEBOmax:

    5 V

  • Vi (off) max:

    0.8 100µA / 5V

  • Vi (on)max:

    0.8 V

  • Vi (on)min:

    0.5 2mA / 0.3V

  • Mounting:

    SMT

  • Polarity:

    PNP (Single)

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
SOT-23
3022
原厂订货渠道,支持BOM配单一站式服务
INFINEON/英飞凌
25+
SOT23
32360
INFINEON/英飞凌全新特价BCR166即刻询购立享优惠#长期有货
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
infineon technologies
23+
NA
358700
原装现货 库存特价/长期供应元器件代理经销
Infineon(英飞凌)
23+
PG-SOT323-3
19850
原装正品,假一赔十
Infineon(英飞凌)
24+
N/A
9855
原装正品现货支持实单
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
Infineon(英飞凌)
25+
SOT-323-3
11580
原装正品现货,原厂订货,可支持含税原型号开票。
INFINEON/英飞凌
2223+
SOT-23
26800
只做原装正品假一赔十为客户做到零风险
Infineon
25+
SOT23
3200
全新原装、诚信经营、公司现货销售

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