丝印代码：BCP52-16；PNP Silicon Epitaxial Planar Transistor

Features ® High Collector Current ® Low Collector-emitter Saturation Voltage

丝印代码：BCP52-16；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

PNP Plastic-Encapsulate Transistors

Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability

60 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BCP55. • High current\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits

PNP Silicon AF Transistors

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54 BCP56 (NPN)

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN)

LOW POWER PNP TRANSISTOR

LOW POWER PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS BCP55-16 APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■ OUTPUT STAGE FOR AUDIO AMPLIFIER

60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability

丝印代码：BCP52/16；60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

PNP Silicon AF Transistors

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PNP Silicon AF Transistors

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60 V, 1 A PNP medium power transistors

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

丝印代码：P5216T；60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

60 V, 1 A PNP medium power transistors

PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Table 1. Product Overview Type number\n Package\n NPN complement\n Nexperia\n JEITA\n JEDEC\n BCP52T\n SOT223\n SC-73\n -\n BCP55T\n BCP52-10T\n • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

Transistors

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BCP52-16T/SOT223/SC-73 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)