PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Q-Band 4-Stage Driver Amplifier

DESCRIPTION The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . FEATURES ● RF frequency : 37.0 to 43.0 GHz ● Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz ● P1dB : ³ 16 dBm(min.) @ 37 to 40 GHz ³ 16 dBm(target) @ 40

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Dual Bias Resistor Trasnsistors

Dual Bias Resistor Trasnsistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digit

Smart Quad Channel Low-Side Switch

Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • µC compatible input • Electrostatic discharge (ESD) protection Application • All kinds of resistive and inductive loads (relays, electromagnetic valves) • µC comp

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing