PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS

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PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件：417.02 Kbytes Page：29 Pages

PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件：417.02 Kbytes Page：29 Pages