丝印代码：3Ls；PNP Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN)

丝印代码：3Ls；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846AW – BC848CW) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Ideally Suited for Automated Insertion • Complementary NPN Types Available (BC846W-BC848W) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SMD General Purpose PNP Transistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Ideally Suited for Automatic Insertion • Complementary PNP Silicon Types Available • For Switching and AF Amplifier Applications • Epoxy meets UL 94 V-0 flammability rating • Moisure S

BC856AW

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications * Operating Temp. : -55°C ~ +150°C

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN)

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Pb Lead(Pb)-Free

丝印代码：3L；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

AF 通用晶体管

NPN硅AF晶体管 • 高电流增益\n• 30 Hz 至 15 kHz 之间的低噪声\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q1011 标准;

丝印代码：3L；PNP Silicon Epitaxial Planar Transistor

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PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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丝印代码：3Ls；PNP Silicon AF Transistor

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PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846AW – BC848CW) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101

Small Signal Transistor

Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and

General Purpose Transistor

Features - Ideally suited for automatic insertion. - For switching and AF amplifier applications.

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PNP 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：3L；PNP Silicon Epitaxial Planar Transistor

文件：1.06616 Mbytes Page：5 Pages

Small Signal Bipolar Transistors

小信号三极管

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo