BC849B价格
参考价格：￥0.0635
型号：BC849B,215 品牌：NXP 备注：这里有BC849B多少钱，2025年最近7天走势，今日出价，今日竞价，BC849B批发/采购报价，BC849B行情走势销售排行榜，BC849B报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BC849B | NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   |
BC849B | GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 |  | |
BC849B | NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain) NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 |  | |
BC849B | SurfacemountSi-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 |  | |
BC849B | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 |  | |
BC849B | GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V | WEITRON Weitron Technology |  | |
BC849B | NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | |
BC849B | NPNGeneralPurposeTransistors ■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
BC849B | NPNgeneralpurposetransistors | ETC 知名厂家 | ETC | |
BC849B | NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
BC849B | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 |  | |
BC849B | SMDNPNTransistor GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | |
BC849B | SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ | GE GE Industrial Company |  | |
BC849B | NPNgeneralpurposetransistors FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC859andBC860. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
BC849B | NPNTransistors 文件：1.33877 Mbytes Page：3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | |
BC849B | NPNPlastic-EncapsulateTransistors 文件：468.75 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | |
BC849B | NPNTransistors 文件：358.01 Kbytes Page：3 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
BC849B | SMDGeneralPurposeNPNTransistors 文件：144.84 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | |
BC849B | NPNgeneralpurposetransistors | ETC 知名厂家 | ETC | |
BC849B | NPNSiliconAFTransistors 文件：183.85 Kbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
BC849B | NPNPlastic-EncapsulateTransistors 文件：226.31 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
SOT23NPNSILICONPLANAR SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | Zetex Zetex Semiconductors |  | | |
SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
CASE318-08,STYLE6SOT-23(TO-236AB) GeneralPurposeTransistors NPNSilicon | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 |  | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPNEpitaxialSiliconTransistor Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
NPNSiliconAFTransistors NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
NPNTransistor FEATURES -Lowreversecurrent,highreliability -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | | |
NPNgeneralpurposetransistors | ETC 知名厂家 | ETC | | |
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 | | | |
NPNSiliconAFTransistors NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
NPNgeneralpurposetransistors FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
NPNSiliconAFTransistors 文件：183.85 Kbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
GeneralPurposeTransistors 文件：116.72 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors 文件：113.71 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors 文件：113.71 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors 文件：116.72 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPNEpitaxialSiliconTransistor 文件：142.4 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPNSiliconEpitaxialPlanarTransistor 文件：446.64 Kbytes Page：5 Pages | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | | |
NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage) 文件：272.32 Kbytes Page：8 Pages | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | | | |
SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors 文件：98.77 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | | |
SMDGeneralPurposeNPNTransistors 文件：130.039 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | | |
NPNTransistor 文件：236.02 Kbytes Page：6 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
SMDGeneralPurposeNPNTransistors 文件：126.13 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | | |
PremierSupplierofElectronicHardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON Abbatron All Rights Reserved |  | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | |
BC849B产品属性
- 类型
描述
- 型号
BC849B
- 制造商
NXP Semiconductors
- 功能描述
TRANSISTOR NPN SOT-23
- 制造商
ON Semiconductor
- 功能描述
TRANSISTOR NPN SOT-23
- 制造商
Infineon Technologies AG
- 功能描述
INF NPN transistor,BC849B 0.1A Ic 5Vce
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
24+ |
NA/ |
3397 |
原装现货,当天可交货,原型号开票 |
|||
PHI |
25+ |
SOT-23 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON |
24+ |
SOT-23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
PHI |
1822+ |
SOT-323 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PHIL |
24+/25+ |
4500 |
原装正品现货库存价优 |
||||
ON |
24+ |
SOT-23 (TO-236) |
25000 |
ON全系列可订货 |
|||
RHC |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
PHI |
18+ |
SOT23 |
20756 |
全新原装现货,可出样品,可开增值税发票 |
|||
Slkor/萨科微 |
24+ |
SOT-23 |
50000 |
Slkor/萨科微一级代理,价格优势 |
BC849B芯片相关品牌
BC849B规格书下载地址
BC849B参数引脚图相关
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- BC848BWH6327XTSA1
- BC848BWH6327
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- BC848BT
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- BC848BQ
- BC848BP
BC849B数据表相关新闻
BC856B,215
BC856B,215
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BC807-25LT1GMM3Z12VST1GBC856BLT1G1N4148TA
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焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-4BC847PN-7-F公司全新原装现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-3-28
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