丝印代码：2C*；NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

丝印代码：2Cs；NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN GENERAL PURPOSE TRANSISTORS

FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

丝印代码：2C*；NPN general purpose transistors

NPN Transistor

FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

丝印代码：2C；NPN general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

NPN general purpose transistors

NPN transistor in a SOT323 plastic package.\n PNP complements: BC859W and BC860W. • Low current (max. 100 mA)\n• Low voltage (max. 45 V).\n• AEC-Q101 qualified;

NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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NPN小信号三极管

通用型双极晶体管

丝印代码：1G；NPN Silicon Epitaxial Planar Transistor

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NPN Silicon Epitaxial Planar Transistor

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NPN Transistor

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SMD General Purpose NPN Transistors

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SMD General Purpose NPN Transistors

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丝印代码：2Cs；NPN Silicon AF Transistors

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封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

Integrated Circuit TV Horizontal/Vertical Countdown Digital Sync System

Description: The NTE849 is an integrated circuit in a 14–Lead DIP type package designed for use in TV horizontal/ vetical countdown digital sync systems. In some video playback units, there are incorrect frequency relationships between horizontal and field frequencies. Automatic forced asynchrono

Square Type

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