BC849C价格

参考价格:¥0.0635

型号:BC849C,215 品牌:NXP 备注:这里有BC849C多少钱,2024年最近7天走势,今日出价,今日竞价,BC849C批发/采购报价,BC849C行情走势销售排行榜,BC849C报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BC849C

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BC849C

NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP)

SIEMENS

Siemens Ltd

SIEMENS
BC849C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

ETL

E-Tech Electronics LTD

ETL
BC849C

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V

WEITRONWEITRON

威堂電子科技

WEITRON
BC849C

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BC849C

NPNGeneralPurposeTransistors

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC849C

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BC849C

NPNSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC849C

SurfacemountSi-EpitaxialPlanarTransistors

GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
BC849C

SMDNPNTransistor

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
BC849C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
BC849C

SmallSignalTransistors(NPN)

FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ

GE

GE Industrial Company

GE
BC849C

NPNgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC859andBC860.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BC849C

NPNPlastic-EncapsulateTransistors

文件:546.55 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BC849C

NPNgeneralpurposetransistors

文件:139.97 Kbytes Page:8 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BC849C

NPNTransistors

文件:1.33877 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC849C

NPNTransistors

文件:358.01 Kbytes Page:3 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
BC849C

SMDGeneralPurposeNPNTransistors

文件:144.84 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BC849C

NPNSiliconAFTransistors

文件:183.85 Kbytes Page:19 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC849C

NPNPlastic-EncapsulateTransistors

文件:226.31 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SOT23NPNSILICONPLANAR

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

Zetex

Zetex Semiconductors

Zetex

CASE318-08,STYLE6SOT-23(TO-236AB)

GeneralPurposeTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPNTransistor

FEATURES -Lowreversecurrent,highreliability -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

NPNgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 30V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 30V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

GeneralPurposeTransistors

文件:116.72 Kbytes Page:13 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

文件:113.71 Kbytes Page:13 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

文件:116.72 Kbytes Page:13 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

文件:113.71 Kbytes Page:13 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEpitaxialSiliconTransistor

文件:142.4 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNTransistor

文件:236.02 Kbytes Page:6 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

SMDGeneralPurposeNPNTransistors

文件:130.039 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec

SMDGeneralPurposeNPNTransistors

文件:126.13 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec

NPNSiliconAFTransistors

文件:183.85 Kbytes Page:19 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

文件:272.32 Kbytes Page:8 Pages

SIEMENS

Siemens Ltd

SIEMENS

R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR

文件:936.79 Kbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR

文件:936.79 Kbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR

文件:936.79 Kbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR

文件:936.79 Kbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR

文件:936.79 Kbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

BC849C产品属性

  • 类型

    描述

  • 型号

    BC849C

  • 制造商

    NXP Semiconductors

  • 功能描述

    Trans GP BJT NPN 30V 0.1A 3-Pin TO-236AB

  • 制造商

    NXP Semiconductors

  • 功能描述

    Trans GP BJT NPN 30V 0.1A 3-Pin TO-236AB Bulk

  • 制造商

    NXP Semiconductors

  • 功能描述

    TRANSISTOR NPN SOT-23

  • 制造商

    NXP Semiconductors

  • 功能描述

    TRANSISTOR, NPN, SOT-23

更新时间:2024-5-3 11:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHILIPS
23+
SOT23
12300
23+
N/A
45880
正品授权货源可靠
ON
2020+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
Nexperia安世
19+
SOT-23
90000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
SOT323
7906200
安世(Nexperia)
23+
SOT-23
21060
进口原装假一赔十可开增值票
INFINEON/英飞凌
23+
SOT-23
24190
原装正品代理渠道价格优势
NXE
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
NEXPERIA/安世
23+
NA
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
INFINEON
2008++
SOT-23
33200
新进库存/原装

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