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BC808晶体管资料
BC808别名:BC808三极管、BC808晶体管、BC808晶体三极管
BC808生产厂家:
BC808制作材料:Si-PNP
BC808性质:表面帖装型 (SMD)_低频或音频放大 (LF)_TR
BC808封装形式:贴片封装
BC808极限工作电压:30V
BC808最大电流允许值:0.5A
BC808最大工作频率:100MHZ
BC808引脚数:3
BC808最大耗散功率:
BC808放大倍数:
BC808图片代号:H-15
BC808vtest:30
BC808htest:100000000
- BC808atest:.5
BC808wtest:0
BC808代换 BC808用什么型号代替:BCX17,BCX18,BCW67,BCW68,
BC808价格
参考价格:¥0.0930
型号:BC808-25LT1G 品牌:ONSemi 备注:这里有BC808多少钱,2024年最近7天走势,今日出价,今日竞价,BC808批发/采购报价,BC808行情走势销售排行榜,BC808报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BC808 | SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BC808 | SmallSignalTransistors(PNP) Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc | GE GE Industrial Company | ||
BC808 | PNPSiliconAFTransistors PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC808 | PNPSiliconTransistor(HighcurrentapplicationSwitchingapplication) Descriptions •Highcurrentapplication •Switchingapplication Features •SuitableforAF-Driverstageandlowpoweroutputstages •ComplementarypairwithBC818 | AUK AUK | ||
BC808 | SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | ||
BC808 | SWITCHINGANDAMPLIFIERAPPLICATIONS SWITCHINGANDAMPLIFIERAPPLICATIONS FEATURES *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoBC817/BC818 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
BC808 | TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR Description Designedforuseindriveandoutputstagesofaudioamplifiers. | DCCOMDc Components 直流元件直流元件有限公司 | ||
BC808 | PNPSiliconEpitaxialPlanarTransistors PNPSiliconEpitaxialPlanarTransistors forswitching,AFdriverandamplifierapplications Thesetransistorsaresubdividedintothreegroups-16,-25and-40,accordingtotheircurrentgain. AscomplementarytypestheNPNtransistorsBC817andBC818arerecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | ||
BC808 | PNPTransistorSurfaceMount FEATURES: *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoBC818 | WEITRONWEITRON 威堂電子科技 | ||
BC808 | Highcurrentapplication Descriptions •Highcurrentapplication •Switchingapplication Features •SuitableforAF-Driverstageand lowpoweroutputstages •ComplementarypairwithBC818 | KODENSHIKodenshi Group 可天士可天士光电子集团 | ||
BC808 | -0.8A,-30VPNPPlasticEncapsulatedTransistor FEATURE •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementarytoBC818 | SECOS SeCoS Halbleitertechnologie GmbH | ||
BC808 | TRANSISTOR(PNP) FEATURES ●SuitableforAF-Driverstagesandlowpoweroutputstages ●ComplementtoBC818 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
BC808 | SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS P–N–Ptransistor SOT-23FormedSMDPackage | CDIL CDIL | ||
BC808 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●SuitableforAF-Driverstagesandlowpoweroutputstages ●ComplementtoBC818 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
BC808 | PNPGeneralPurposeAmplifier FEATURES ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emitterstaurationvoltage. ●Complementarytypes:BC818. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
BC808 | Plastic-EncapsulateTransistors FEATURES SuitableforAF-Driverstagesandlowpoweroutputstages ComplementtoBC818 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
BC808 | SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BC808 | SuitableforAF-Driverstagesandlowpoweroutputstages SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BC808 | SOT-23Plastic-EncapsulateTransistors FEATURES SuitableforAF-Driverstagesandlowpoweroutputstages ComplementtoBC818 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
BC808 | Highcurrentapplication 文件:265.01 Kbytes Page:4 Pages | KODENSHIKodenshi Group 可天士可天士光电子集团 | ||
BC808 | SMDGeneralPurposePNPTransistors 文件:141.37 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
BC808 | PNPSiliconEpitaxialPlanarTransistors 文件:657.46 Kbytes Page:3 Pages | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | ||
BC808 | SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP) 文件:298.7 Kbytes Page:2 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
BC808 | SWITCHINGANDAMPLIFIERAPPLICATIONS 文件:201.33 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
BC808 | PNPSiliconAFTransistor 文件:111.91 Kbytes Page:11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC808 | SOT-23-PowerTransistorandDarlingtons 文件:27.5 Kbytes Page:2 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
BC808 | SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors 文件:110.03 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSiliconAFTransistors PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN) | SIEMENS Siemens Ltd | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNPSiliconGeneralPurposeTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof0.3WattsofPowerDissipation. •Collector-current0.8A •Operatingandstoragejunctiontemperaturerange:-65°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •Moi | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SmallSignalTransistors(PNP) Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc | GE GE Industrial Company | |||
Plastic-EncapsulateTransistors FEATURES SuitableforAF-Driverstagesandlowpoweroutputstages ComplementtoBC818 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | |||
PNPGeneralPurposeAmplifier FEATURES ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emitterstaurationvoltage. ●Complementarytypes:BC818. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
Plastic-EncapsulateTransistors FEATURES SuitableforAF-Driverstagesandlowpoweroutputstages ComplementtoBC818 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation225mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandr | DiotecDIOTEC 德欧泰克 | |||
PNPSiliconAFTransistor(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN) | SIEMENS Siemens Ltd | |||
PNPSiliconAFTransistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN) | SIEMENS Siemens Ltd | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNPSiliconGeneralPurposeTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof0.3WattsofPowerDissipation. •Collector-current0.8A •Operatingandstoragejunctiontemperaturerange:-65°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •Moi | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSiliconAFTransistors PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Plastic-EncapsulateTransistors FEATURES SuitableforAF-Driverstagesandlowpoweroutputstages ComplementtoBC818 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | |||
PNPGeneralPurposeAmplifier FEATURES ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emitterstaurationvoltage. ●Complementarytypes:BC818. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
SmallSignalTransistors(PNP) Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc | GE GE Industrial Company | |||
Plastic-EncapsulateTransistors FEATURES SuitableforAF-Driverstagesandlowpoweroutputstages ComplementtoBC818 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation225mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandr | DiotecDIOTEC 德欧泰克 | |||
PNPSiliconAFTransistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNPSiliconAFTransistor(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN) | SIEMENS Siemens Ltd | |||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSiliconGeneralPurposeTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof0.3WattsofPowerDissipation. •Collector-current0.8A •Operatingandstoragejunctiontemperaturerange:-65°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •Moi | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN) | SIEMENS Siemens Ltd | |||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSiliconAFTransistors PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
SmallSignalTransistors(PNP) Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc | GE GE Industrial Company |
BC808产品属性
- 类型
描述
- 型号
BC808
- 制造商
DCCOM
- 制造商全称
Dc Components
- 功能描述
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
inf |
22+ |
500000 |
行业低价,代理渠道 |
||||
ON/安森美 |
23+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
onsemi(安森美) |
23+ |
SOT-23-3 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
英飞凌 | Infineon |
21+ |
SOT23-3 |
3800 |
||||
INFINEON |
2016+ |
SOT-323 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INF |
23+ |
SOT223 |
20000 |
全新原装假一赔十 |
|||
INFINEO |
2020+ |
SOT23 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON |
23+ |
SOT-323 |
7936 |
||||
PHILIPS/飞利浦 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
24+ |
SOT-323 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
BC808规格书下载地址
BC808参数引脚图相关
- c430p
- c3055
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- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- BC848R
- BC848
- BC847-W
- BC847R
- BC847
- BC846-W
- BC846R
- BC846
- BC838(-16...-40)
- BC837(-16...-40)
- BC828(-16...-40)
- BC827(-16...-40)
- BC818-W
- BC818R
- BC818
- BC817-W
- BC817SU
- BC817S
- BC817RA
- BC817R
- BC817N3
- BC817K
- BC817F
- BC817DS
- BC817B
- BC817A
- BC81740
- BC81725
- BC81716
- BC817
- BC8-12
- BC808-W
- BC808W
- BC808R
- BC808F
- BC808A
- BC80840
- BC80825
- BC80816
- BC807-W
- BC807W
- BC807U
- BC807S
- BC807RA
- BC807R
- BC807N3
- BC807K
- BC807F
- BC807DS
- BC807B
- BC807A
- BC80740
- BC80725
- BC80716
- BC807
- BC7601
- BC75-12
- BC738(-10...-40)
- BC738
- BC737(-10...-40)
- BC737
- BC728(-10...-40)
- BC728
- BC727(-10...-40)
- BC727
- BC714L
- BC714
- BC682L
- BC682
- BC651(D,E)
- BC650(D,E)
- BC640(-6...-10)
- BC639(-6...-10)
- BC638(-6...-10)
- BC637(-6...-10)
- BC636(-6...-16)
- BC635(-6...-16)
- BC618
BC808数据表相关新闻
BC807G-SOT23.3R-40-TG_UTC代理商
BC807G-SOT23.3R-40-TG_UTC代理商
2023-2-2BC817-40
进口代理
2022-6-28BC817-40,215 SOT23 NXP/恩智浦 NPN三极管 原装正品
原装正品现货供应0755-28892389/13713856319;QQ:2639752116;微信:13713856319;
2021-3-26BC807-40LT1G技术参数 BC807-40LT1G批号:05+ 封装:SOT-23
BC807-40LT1G技术参数BC807-40LT1G批号:05+封装:SOT-23
2020-6-5BC807-40
BC807-40,全新原装当天发货或门市自取0755-82732291.
2019-11-19BC817-40
BC817-40,全新原装当天发货或门市自取0755-82732291.
2019-11-19
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