Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

Suitable for AF-Driver stages and low power output stages

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

SWITCHING AND AMPLIFIER APPLICATIONS

SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818

PNP Silicon Transistor (High current application Switching application)

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC818

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor SOT-23 Formed SMD Package

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Transistor Surface Mount

FEATURES: * Suitable for AF-Driver stages and low power output stages * Complement to BC818

PNP General Purpose Amplifier

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter stauration voltage. ● Complementary types:BC818.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in drive and output stages of audio amplifiers.

Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

TRANSISTOR (PNP)

FEATURES ● Suitable for AF-Driver stages and low power output stages ● Complement to BC818

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Suitable for AF-Driver stages and low power output stages ● Complement to BC818

High current application

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC818

-0.8A , -30V PNP Plastic Encapsulated Transistor

FEATURE • Suitable for AF-Driver stages and low power output stages • Complementary to BC818

PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended.

SOT-23 Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

PNP Bipolar Transistor

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications. • Pb-Free Packages are Available\n• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable;

丝印代码：5CW；PNP Silicon Epitaxial Planar Transistors

文件：657.46 Kbytes Page：3 Pages

High current application

文件：265.01 Kbytes Page：4 Pages

SOT-23 - Power Transistor and Darlingtons

文件：27.5 Kbytes Page：2 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件：298.7 Kbytes Page：2 Pages

SMD General Purpose PNP Transistors

文件：141.37 Kbytes Page：2 Pages

Surface Mount General Purpose Si-Epi-Planar Transistors

文件：110.03 Kbytes Page：2 Pages

SWITCHING AND AMPLIFIER APPLICATIONS

文件：201.33 Kbytes Page：4 Pages

PNP Silicon AF Transistor

文件：111.91 Kbytes Page：11 Pages

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

丝印代码：9GA；Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.8A • Operating and storage junction temperature range: -65°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moi

PNP General Purpose Amplifier

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter stauration voltage. ● Complementary types:BC818.

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

●For general AF applications ●High collector current ●High current gain ●Low collector-emitter saturation voltage ●Complementary types: BC 817, BC 818 (NPN)

丝印代码：5E；Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

PNP Silicon AF Transistors

• For general AF applications\n• High collector current\n• High current gain\n• Low collector-emitter saturation voltage\n• Complementary types: BC817W, BC818W (NPN)

PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 225 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and r

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

丝印代码：9GB；Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP General Purpose Amplifier

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter stauration voltage. ● Complementary types:BC818.

PNP Silicon General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.8A • Operating and storage junction temperature range: -65°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moi

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

●For general AF applications ●High collector current ●High current gain ●Low collector-emitter saturation voltage ●Complementary types: BC 817, BC 818 (NPN)

丝印代码：5F；Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 225 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and r

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

丝印代码：9GC；Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

PNP Silicon General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.8A • Operating and storage junction temperature range: -65°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moi

PNP General Purpose Amplifier

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter stauration voltage. ● Complementary types:BC818.