丝印代码：9GB；Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP General Purpose Amplifier

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter stauration voltage. ● Complementary types:BC818.

丝印代码：5F；Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

PNP Silicon General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.8A • Operating and storage junction temperature range: -65°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moi

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

●For general AF applications ●High collector current ●High current gain ●Low collector-emitter saturation voltage ●Complementary types: BC 817, BC 818 (NPN)

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

小信号双极型晶体管

丝印代码：5F；PNP General Purpose Amplifier

文件：1.046839 Mbytes Page：2 Pages

PNP Silicon General Purpose Transistors

文件：317.35 Kbytes Page：3 Pages

PNP Transistors

文件：1.07219 Mbytes Page：4 Pages

Surface Mount General Purpose

文件：109.24 Kbytes Page：2 Pages

PNP Silicon AF Transistor

文件：111.91 Kbytes Page：11 Pages

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 225 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and r

PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

General Purpose Transistors

文件：103.27 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 25V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 25V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors PNP Silicon

文件：134.56 Kbytes Page：4 Pages

General Purpose Transistors

文件：103.27 Kbytes Page：4 Pages

General Purpose Transistors

文件：103.27 Kbytes Page：4 Pages

PNP Silicon AF Transistor

文件：111.91 Kbytes Page：11 Pages

Transistors