PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

●For general AF applications ●High collector current ●High current gain ●Low collector-emitter saturation voltage ●Complementary types: BC 817, BC 818 (NPN)

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.8A • Operating and storage junction temperature range: -65°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moi

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

Plastic-Encapsulate Transistors

FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818

Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

PNP General Purpose Amplifier

FEATURES ● High collector current. ● High current gain. ● Low collector-emitter stauration voltage. ● Complementary types:BC818.

PNP General Purpose Amplifier

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小信号双极型晶体管

PNP Transistors

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PNP Silicon General Purpose Transistors

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PNP Silicon AF Transistor

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Surface Mount General Purpose

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Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 225 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and r

PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 25V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 25V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors PNP Silicon

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PNP Silicon AF Transistor

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Transistors