封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：BC807-40H/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP general purpose transistor

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC817. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

PNP SURFACE MOUNT TRANSISTOR

Features 310mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available(BC817)

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1. - AEC-Q101 Qualified

General Purpose Transistors

Features - Epitaxial planar die construction. - AEC-Q101 Qualified. - High collector current. - High current gain. - Low collector-emitter saturation voltage.