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BC51晶体管资料
BC510(F)(B,C)别名：BC510(F)(B,C)三极管、BC510(F)(B,C)晶体管、BC510(F)(B,C)晶体三极管
BC510(F)(B,C)生产厂家：德国电子元件股份公司
BC510(F)(B,C)制作材料：Si-NPN
BC510(F)(B,C)性质：通用型 （Uni）_低噪放大 （ra）
BC510(F)(B,C)封装形式：直插封装
BC510(F)(B,C)极限工作电压：40V
BC510(F)(B,C)最大电流允许值：0.2A
BC510(F)(B,C)最大工作频率：200MHZ
BC510(F)(B,C)引脚数：3
BC510(F)(B,C)最大耗散功率：0.36W
BC510(F)(B,C)放大倍数：β=850
BC510(F)(B,C)图片代号：A-23
BC510(F)(B,C)vtest：40
BC510(F)(B,C)htest：200000000
- BC510(F)(B,C)atest：0.2
BC510(F)(B,C)wtest：0.36
BC510(F)(B,C)代换 BC510(F)(B,C)用什么型号代替：BC184,BC384,BC413,BC550,3DG130C,
BC51价格
参考价格：￥0.5021
型号：BC51-10PA,115 品牌：NXP 备注：这里有BC51多少钱，2025年最近7天走势，今日出价，今日竞价，BC51批发/采购报价，BC51行情走势销售排行榜，BC51报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 |   | ||
45 V/60 V/80 V, 1 A PNP medium power transistors General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors 1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V/60 V/80 V, 1 A PNP medium power transistors General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors 1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa | NEXPERIA 安世 | | ||
PNP Darlington transistor DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required. | Philips 飞利浦 | | ||
PNP Silicon Darlington Transistor (High current gain High collector current) PNP Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 517 (NPN) | SIEMENS 西门子 | | ||
PNP Darlington Transistor PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. | Fairchild 仙童半导体 | | ||
COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR The BC516(PNP) and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain. | MICRO-ELECTRONICS | | ||
PNP Silicon Darlington Transistor PNP Silicon Darlington Transistor | SEMTECH_ELEC 先之科半导体 | | ||
TO-92 PACKAGE TO-92 PACKAGE | KEC KEC(Korea Electronics) | | ||
Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current | JIANGSU 长电科技 | | ||
PNP Darlington Transistor Features • This Device is Designed for Applications Reguiring Extremely High Current Gain at Currents to 1 A. • This is a Pb−Free Device | ONSEMI 安森美半导体 | | ||
PNP Darlington Transistor PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. | Fairchild 仙童半导体 | | ||
PNP Darlington Transistor Features • This Device is Designed for Applications Reguiring Extremely High Current Gain at Currents to 1 A. • This is a Pb−Free Device | ONSEMI 安森美半导体 | | ||
Darlington Transistors(NPN Silicon) Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
NPN Darlington transistor DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required. | Philips 飞利浦 | | ||
Darlington Transistors Darlington Transistors NPN Silicon | Motorola 摩托罗拉 | | ||
NPN Silicon Darlington Transistor (High current gain High collector current) NPN Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 516 (PNP) | SIEMENS 西门子 | | ||
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR) GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. | KEC KEC(Korea Electronics) | | ||
COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR The BC516(PNP) and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain. | MICRO-ELECTRONICS | | ||
NPN Silicon Darlington Transistor NPN Silicon Darlington Transistor TO-92 Plastic Package Weight approx. 0.19g | SEMTECH_ELEC 先之科半导体 | | ||
NPN Darlington Transistor Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device | ONSEMI 安森美半导体 | | ||
NPN Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 1.0 A. • Sourced from process 05. | Fairchild 仙童半导体 | | ||
NPN Darlington Transistor Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device | ONSEMI 安森美半导体 | | ||
General Purpose NPN Epitaxial Planar Transistor Description • The BC517A3 is a darlington amplifier transistor • Pb-free package | CYSTEKEC 全宇昕科技 | | ||
NPN Darlington Transistor Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device | ONSEMI 安森美半导体 | | ||
45 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | | |
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V/60 V/80 V, 1 A PNP medium power transistors General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors 1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors 1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa | NEXPERIA 安世 | | ||
45 V/60 V/80 V, 1 A PNP medium power transistors | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors | NEXPERIA 安世 | | ||
封装/外壳：3-UDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1A DFN2020D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
保险丝夹 | Better 贝特股份 | | ||
封装/外壳：3-PowerUDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1A 3HUSON 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
PNP Darlington Transistor 文件：254.88 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
PNP Darlington Transistor 文件：254.88 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
PNP Darlington Transistor 文件：254.88 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Darlington Transistors 文件：82.45 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
EPITAXIAL PLANAR NPN TRANSISTOR 文件：40.72 Kbytes Page：2 Pages | KEC KEC(Korea Electronics) | | ||
TO-92 PACKAGE 文件：31.4 Kbytes Page：1 Pages | KEC KEC(Korea Electronics) | | ||
Darlington Transistors NPN Silicon 文件：71.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
NPN Darlington Transistor 文件：32.89 Kbytes Page：3 Pages | Fairchild 仙童半导体 | | ||
NPN Darlington Transistor 文件：621.37 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Darlington Transistors NPN Silicon 文件：71.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Darlington Transistors 文件：82.45 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
TO-92 PACKAGE 文件：31.4 Kbytes Page：1 Pages | KEC KEC(Korea Electronics) | | ||
EPITAXIAL PLANAR NPN TRANSISTOR 文件：40.72 Kbytes Page：2 Pages | KEC KEC(Korea Electronics) | | ||
NPN Darlington Transistor 文件：621.37 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
NPN Darlington Transistor 文件：621.37 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Darlington Transistors NPN Silicon 文件：71.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Darlington Transistors NPN Silicon 文件：71.35 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
BC51产品属性
- 类型
描述
- 型号
BC51
- 制造商
NXP Semiconductors
- 功能描述
TRANS, PNP, 45V, 1A, SOT1061
- 制造商
NXP Semiconductors
- 功能描述
TRANS, PNP, 45V, 1A, SOT1061; Transistor
- Polarity
PNP; Collector Emitter Voltage
- V(br)ceo
-45V; Transition Frequency Typ
- ft
145MHz; Power Dissipation
- Pd
1.65W; DC Collector
- Current
-1A; DC Current Gain
- hFE
63; No. of
- Pins
3 ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
26+ |
SOT1061D |
60000 |
只有原装,可配单 |
|||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
恩XP |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
TI/德州仪器 |
23+ |
MSOP8 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
恩XP |
23+ |
NA |
123000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Nexperia(安世) |
24+ |
DFN-3(2x2) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Nexperia USA Inc. |
25+ |
3-UDFN 裸露焊盘 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEXPERIA/安世 |
25+ |
SOT1061D |
600000 |
NEXPERIA/安世全新特价BC51-10PASX即刻询购立享优惠#长期有排单订 |
|||
NEXPERIA/安世 |
23+ |
SOT1061 |
6000 |
原装正品假一罚百!可开增票! |
BC51规格书下载地址
BC51参数引脚图相关
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- BC546C
- BC546BG
- BC546B
- BC546A
- BC546
- BC53PAS
- BC53PA
- BC538
- BC537
- BC5347B
- BC531
- BC530
- BC52PAS
- BC52PA
- BC529
- BC528(-6...-25)
- BC528
- BC527(-6...-25)
- BC527
- BC526(A,B,C)
- BC525
- BC524(B,C)
- BC523(B,C)
- BC522(C,D,E)
- BC521(C,D)
- BC520(B,C)
- BC51PAS
- BC51PA
- BC517P
- BC517G
- BC517A3
- BC517
- BC516P
- BC516
- BC514(A,B,C)
- BC513(A,B,C)
- BC512(A,B)
- BC510(F)(B,C)
- BC509(F)(B,C)
- BC508(F)(A,B)
- BC507(F)(A,B)
- BC490G
- BC490A
- BC490(-5...-18)(A,B,L)
- BC490
- BC489L
- BC489G
- BC489B
- BC489AG
- BC489A
- BC489(-5...-18)(A,B,L)
- BC489
- BC488B
- BC488(-5...-18)(A,B,L)
- BC488
- BC487L
- BC487G
- BC487BG
- BC487B
- BC487A
- BC487(-5...-18)(A,B,L)
- BC487
- BC486(-5...-18)(A,B,L)
- BC486
- BC485L
- BC485B
- BC485(-5...-18)
- BC479(B)
- BC478(A,B)
- BC477(VI,A)
- BC469(B,C)
- BC468(A,B,C)
- BC467(A,B)
- BC461(-4...-6)
- BC460(-4...-6)
- BC456(A,B,C)
- BC455(A,B,C)
- BC453(A,B,C)
BC51数据表相关新闻
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BC57E687C-GITB-E4
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2019-11-16BC-2600顶装CR2032锂电池固定器BC-2600
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2019-9-5BC57E687C-GITB-E4
BC57E687C-GITB-E4，全新原装当天发货或门市自取0755-82732291.
2019-8-22BC10-工业控制IC
BC10和BC20无刷直流电动机控制器提供必要的功能来控制传统的3相无刷直流电动机开环或闭环系统。 BC10能控制需要连续输入功率1千瓦的电动机;BC20是需要高达10千瓦，能够控制更大的马达连续输入功率。两个控制器驱动马达，产生PWM，解码减刑模式，多路电流检测，并提供误差放大。操作60 °或120°减刑一个逻辑输入模式可以选择。电流检测的复用是用来做目前显示器总是积极电机线圈的电流成正比的输出。因此，可用于产生电流监视器输出跨导驱动器，便于伺服补偿。控制器可能产生的应用四象限PWM需要通过零速度，或2象限连续过渡电气安静单向应用操作的PWM。2象限模式的旋转方向可能逆转使用反向命令的输入。
2012-12-4
DdatasheetPDF页码索引
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