丝印代码：BP；45 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

45 V, 1 A PNP medium power transistors

45 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. NPN complement: BC54PA. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Leadless very small SMD plastic package with medium power capability\n• AEC-Q101 qualified;

丝印代码：C4；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

丝印代码：C4；45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

45 V/60 V/80 V, 1 A PNP medium power transistors

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\nTable 1. Product overview Type number[1]\n Package\n NPN complement\n BC5 • High collector current capability IC and ICM\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Two current gain selections\n• Suitable for Automatic Optical Inspection (AOI) of solder joint\n;

丝印代码：C4；45 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

45 V, 1 A PNP medium power transistors

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.

封装/外壳：3-PowerUDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1A 3HUSON 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-UDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1A DFN2020D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个