VHF variable capacitance diode

DESCRIPTION The BB158 is variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The matched type, BB148 has the same specification. FEATURES • Excellent linearity • Very small plastic SMD package • C28: 2.6 pF; ratio: 15 •

VHF variable capacitance diode

封装/外壳：模块 包装：散装 描述：SUMMER/WINTER THERMOSTAT 传感器，变送器 温度传感器 - 温控器 - 机械 - 工业

封装/外壳：模块 包装：散装 描述：SUMMER/WINTER THERMOSTAT 传感器，变送器 温度传感器 - 温控器 - 机械 - 工业

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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