Silicon Switching Diode

Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES

DESCRIPTION The CENTRAL SEMICONDUCTOR BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage capabilities. Marking Code is CJP.

Fast Switching Speed

Features • Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • Green Device (Note 2)

Silicon Switching Diode Array

Features ● Electrically insulated high-voltage medium-speed diodes

Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)

Silicon Switching Diode Array ● Electrically insulated high-voltage medium-speed diodes

High Voltage Double Diode

FEATURES ● High Switching Speed:Max.50ns. ● High Continuous Reverse Voltage:300V. ● Electrically Insulated Diodes. APPLICATIONS ● General application.

High voltage double diode

FEATURES •Small plastic SMD package •High switching speed: max. 50 ns •High continuous reverse voltage: 300 V •Electrically insulated diodes. APPLICATIONS •High voltage switching •Automotive •Communication. DESCRIPTION The BAW101 is a high-speed switching diode array with two separat

Surface mount Diode-Switching Dual: High Voltage: Same Polarity

switching diode

High voltage double diode

DUAL SURFACE MOUNT SWITCHING DIODE

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Silicon Switching Diode

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High voltage double diode

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Fast Switching Speed

Features • Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • Green Device (Note 2)

High voltage double diode

High Voltage Double Diode

Features ● Small plastic SMD package ● High switching speed: max. 50 ns ● High continuous reverse voltage: 300 V ● Electrically insulated diodes

High voltage double diode

DESCRIPTION The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Ele

HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: 150nA at Room Temperature • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4)

High voltage double diode

1. General description The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small plastic SMD package • High switching speed: max.

HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: 150nA at Room Temperature • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4)

High voltage double diode

1. General description The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small plastic SMD package • High switching speed: max.

HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V

HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V

Silicon Switching Diode

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SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES

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ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES

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High voltage double diode

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DUAL SURFACE MOUNT SWITCHING DIODE

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DUAL SURFACE MOUNT SWITCHING DIODE

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High voltage double diode

文件：136.13 Kbytes Page：9 Pages

DUAL SURFACE MOUNT SWITCHING DIODE

文件：277.83 Kbytes Page：5 Pages

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 300V 250MA SOT143 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR） 描述：DIODE ARRAY GP 300V 250MA SOT143 分立半导体产品 二极管 - 整流器 - 阵列

DUAL SURFACE MOUNT SWITCHING DIODE

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DUAL SURFACE MOUNT SWITCHING DIODE

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High voltage double diode

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HIGH VOLTAGE DUAL SWITCHING DIODE

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HIGH VOLTAGE DUAL SWITCHING DIODE

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Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Smooth, high torque, roller ratchet handle

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Precision Wirewound Resistors

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