HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: 150nA at Room Temperature • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4)

High voltage double diode

DESCRIPTION The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Ele

High voltage double diode

High Voltage Double Diode

Features ● Small plastic SMD package ● High switching speed: max. 50 ns ● High continuous reverse voltage: 300 V ● Electrically insulated diodes

丝印代码：K2；High voltage double diode

1. General description The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small plastic SMD package • High switching speed: max.

High voltage double diode

High voltage double diode

The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. • Small plastic SMD package\n• High switching speed: max. 50 ns\n• High continuous reverse voltage: 300 V\n• Electrically insulated diodes.\n• AEC-Q101 qualified;

switching diode

HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: 150nA at Room Temperature • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4)

丝印代码：K2；High voltage double diode

1. General description The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small plastic SMD package • High switching speed: max.

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：DIODE ARRAY GP 300V 250MA 6TSSOP 分立半导体产品 二极管 - 整流器 - 阵列

HIGH VOLTAGE DUAL SWITCHING DIODE

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High voltage double diode

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封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 300V 250MA SOT363 分立半导体产品 二极管 - 整流器 - 阵列

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

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Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages