HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V

switching diode

HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V

HIGH VOLTAGE DUAL SWITCHING DIODE

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封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT） 描述：DIODE ARRAY GP 325V 250MA SOT563 分立半导体产品 二极管 - 整流器 - 阵列

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Smooth, high torque, roller ratchet handle

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Precision Wirewound Resistors

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