Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

Small Signal Schottky Diodes

FEATURES • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General purpose and sw

Small Signal Schottky Diodes

Integrated protection ring against static discharge\nLow capacitance\nLow leakage current;

Small Signal Schottky Diodes

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Small Signal Schottky Diodes

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Small Signal Schottky Diodes

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Small Signal Schottky Diodes

文件：92.15 Kbytes Page：5 Pages

Small Signal Schottky Diodes

文件：166.22 Kbytes Page：5 Pages

封装/外壳：SOD-80 变式 包装：卷带（TR） 描述：DIODE SCHOTTKY 50V 30MA SOD80 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-80 变式 包装：卷带（TR） 描述：DIODE SCHOTTKY 50V 30MA SOD80 分立半导体产品 二极管 - 整流器 - 单

Small Signal Schottky Diodes

文件：166.22 Kbytes Page：5 Pages

Small Signal Schottky Diodes

文件：92.15 Kbytes Page：5 Pages

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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