Glass Passivated Junction Fast Switching Plastic Rectifier

FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material catego

1 Amp Glass Passivated Fast Recovery Rectifier 400~1000 Volts

Features • Halogen free available upon request by adding suffix -HF • Low Leakage Current • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Fast Switching For High Efficiency • High temperature soldering guaranteed:260°C /10 seconds • Lead Free Finish/RoHS Complia

Glass Passivated Junction Fast Switching Rectifier

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快恢复二极管

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 600V 1A DO204AL 分立半导体产品 二极管 - 整流器 - 单

整流器 1.0 Amp 600 Volt

封装/外壳：DO-204AL，DO-41，轴向 包装：带盒（TB） 描述：DIODE GEN PURP 600V 1A DO204AL 分立半导体产品 二极管 - 整流器 - 单

整流器 1.0 Amp 600 Volt

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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