Embedded LPDDR2 SDRAM

Features • Ultra-low-voltage core and I/O power supplies • Frequency range – 400 MHz (data rate: 800 Mb/s/pin) • 4n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidi

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f