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封装/外壳:径向 包装:散装 描述:RES 18 OHM 10% 3.5W RADIAL 电阻器 通孔式电阻器

OHMITE

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

MOTOROLA

摩托罗拉

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

NTE

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

AX180K产品属性

  • 类型

    描述

  • 型号

    AX180K

  • 功能描述

    陶瓷复合电阻器 3.5watt 18ohm 10% High Energy Non-Ind.

  • RoHS

  • 制造商

    KOA Speer

  • 电阻

    1 kOhms

  • 容差

    10 %

  • 功率额定值

    1 W

  • 电压额定值

    500 V

  • 系列

    PCF

  • 温度系数

    - 1200 PPM/K

  • 端接类型

    Axial

  • 尺寸

    5.5 mm Dia. x 16.5 mm L

  • 工作温度范围

    - 40 C to + 200 C

  • 封装

    Reel

更新时间:2026-8-4 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
78000
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