EGSM/DCS/PCS Triple Band Power Amplifier Module

Description The AWT6102 is a 3.5V power amplifier module for use in dual Mode GSM/DCS/PCS wireless handsets and communication systems. FEATURES • InGaP HBT Technology • High Efficiency 55 GSM • High Efficiency 50 DCS • High Efficiency 45 PCS • Low Leakage Current (

Cellular Dual Mode AMPS/TDMA Mode 3.5V/30 dBm Linear Power Amplifier Module

Description The AWT6103 is a 3.5V power amplifier module for use in Dual Mode AMPS/TDMA handsets. FEATURES • InGaP HBT Technology • High Efficiency 50 AMPS • High Efficiency 45 TDMA • Low Leakage Current (

PCS TDMA 3.5V/30 dBm Linear Power Amplifier Module

Description The AWT6104 is a 3.5V power amplifier module for use in PCS TDMA wireless handsets and communication systems. FEATURES • InGaP HBT Technology • High Efficiency 40 PCS • Low Leakage Current (

Cellular Dual Mode AMPS/CDMA

PRODUCT DESCRIPTION The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power qui

Cellular Dual Mode AMPS/CDMA

PRODUCT DESCRIPTION The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power qui

PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6106 is a 3.5 V (3.0 V to 4.2 V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, a

PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6106 is a 3.5 V (3.0 V to 4.2 V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, a

EGSM/DCS Dual Band 3.5V GPRS Power Amplifier Module

EGSM/DCS Dual Band 3.5V GPRS Power Amplifier Module APPLICATIONS ● EGS/DCS Dual Band Handsets/PDA ● GPRS Class 10

Quad Band Power Amplifier Module

PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a

Quad Band Power Amplifier Module

PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a

KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6109 is a 3.5 V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Full output power i

KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6109 is a 3.5 V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Full output power i

CDMA/AMPS Power Amplifier

General Description The AWT6111 is a hetero-junction bipolar transistor (HBT) amplifier designed for the CDMA cellular handset. The frequency band of operation is 824-849 MHz. The AWT6111 is designed to operate from a single lithium-ion (Li-ion) battery. The amplifier input and output are matched

Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6112 is a high power, high efficiency amplifier module for dual mode AMPS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bia

Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6112 is a high power, high efficiency amplifier module for dual mode AMPS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bia

Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6112 is a high power, high efficiency amplifier module for dual mode AMPS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bia

PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6113 is a high power, high efficiency amplifier module for PCS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes tha

KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bi

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier

PRODUCT DESCRIPTION ANADIGICS is introducing two 3-stage power amplifiers designed for high performance in Quad Band Applications. The amplifiers are packaged in a very small 6 x 8mm module. The output power is controlled by changing the voltage applied to the VAPC pin for each amplifier. The par

Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module

PRODUCT DESCRIPTION The AWT6130 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode handset designs supporting E911 (GPS enabled). The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reli

PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6131 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode handset designs supporting E911 (GPS enabled). The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reli

PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6131 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode handset designs supporting E911 (GPS enabled). The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reli

415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6132R is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power mode is available

415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6132R is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power mode is available

415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6132R is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power mode is available

PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6133 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6133 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

KPCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6134 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.8 V, a requirement for compatibility with the Qualcomm 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technolog

KPCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6134 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.8 V, a requirement for compatibility with the Qualcomm 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technolog

PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF= +2.8 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF= +2.8 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6136 is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power quiescent current

450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6136 is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power quiescent current

450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6136 is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power quiescent current

HELP Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/ 1XRTT amplifier designed specifically for Cellular wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consu

HELP Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/ 1XRTT amplifier designed specifically for Cellular wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consu

LINEAR POWER AMPLIFIER MODULE

PRODUCT DESCRIPTION The AWT6138 PCS CDMA Power Amplifier is a high performance CDMA2000/1XRTT amplifier designed specifically for PCS wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consumption.

LINEAR POWER AMPLIFIER MODULE

PRODUCT DESCRIPTION The AWT6138 PCS CDMA Power Amplifier is a high performance CDMA2000/1XRTT amplifier designed specifically for PCS wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consumption.

QUAD BAND POWER AMPLIFIER MODULE WITH INTERGRATED POWER CONTROL

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Intergrated Power Control

Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for e

Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for e

Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for e

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION As with previous generations, the AWT6166 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6166 input and output terminals are internal matched to 50 ohms and DC blocked, reducin

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION As with previous generations, the AWT6166R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6166R input and output terminals are internal matched to 50 ohms and DC blocked, reduc

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION As with previous generations, the AWT6166R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6166R input and output terminals are internal matched to 50 ohms and DC blocked, reduc

GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION As with previous generations, the AWT6167 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. FEATURES • Integrated Vreg (regulated supply) • Harmonic Performance ≤ -25 dBm • High Effic

GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION As with previous generations, the AWT6167R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167R input and output terminals are internal matched to 50 ohms and DC blocked, reduc

GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

PRODUCT DESCRIPTION As with previous generations, the AWT6167R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167R input and output terminals are internal matched to 50 ohms and DC blocked, reduc

GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. FEATURES • Internal Reference Voltage •

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. FEATURES • InGaP HBT Technology • Low profile 1.1

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. FEATURES • InGaP HBT Technology • Low profile 1.1

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. FEATURES • InGaP HBT Technology • Low profile 1.1

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. FEATURES • InGaP HBT Technology • Low profile 1.1

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

PRODUCT DESCRIPTION This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. FEATURES • InGaP HBT Technology • Low profile 1.1

Cellular Dual Mode AMPS/TDMA Mode 3.5V/30 dBm Linear Power Amplifier Module

PCS TDMA 3.5V/30 dBm Linear Power Amplifier Module

The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications.

450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

文件：401.27 Kbytes Page：9 Pages