PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF= +2.8 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF= +2.8 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

Schottky MiniMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 2X30 Amperes avg. ● 150 °C Junction Temperature ● Reverse Energy Tested ● Low Forward Voltage ● ROHS Compliant

HIGH-SPEED 5.3 kV TRIOS OPTOCOUPLER

DESCRIPTION The SFH6135 and SFH6136 optocouplers feature a high signal transmission rate and a high isolation resistance. They have a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic

High Speed Optocoupler, 1 MBd, Transistor Output

DESCRIPTION The SFH6135 and SFH6136 optocouplers feature a high signal transmission rate and a high isolation resistance. They have a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic

HI-FI POP-NISE CANCELLER CIRCUIT

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