PRODUCT DESCRIPTION

The AWT6133 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

FEATURES

• InGaP HBT Technology

• High Efficiency: 38

• Low Quiescent Current: 50 mA

• Low Leakage Current in Shutdown Mode: <1 µA

• VREF = +2.85 V (+2.7 V min over temp)

• Optimized for a 50 Ω System

• Low Profile Miniature Surface Mount Package: 1.56 mm Max

• CDMA 1XRTT Compliant

• CDMA 1xEV-DO Compliant

APPLICATIONS

• PCS CDMA Wireless Handsets

• Dual Band CDMA Wireless Handsets