HEXFETPower MOSFET

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AUTOMOTIVE GRADE

文件：506.83 Kbytes Page：11 Pages

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package

HEXFETPower MOSFET

文件：739.25 Kbytes Page：12 Pages

AUTOMOTIVE GRADE

文件：692.41 Kbytes Page：10 Pages

AUTOMOTIVE GRADE

文件：692.41 Kbytes Page：10 Pages

AUTOMOTIVE GRADE

文件：506.83 Kbytes Page：11 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res