SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack

MBRB4030 SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

Schottky Barrier Rectifier

DESCRIPTION ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature APPLICATIONS · For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection ap

Schottky Barrier Rectifier

FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequency

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This

SWITCHMODE™ Power Rectifier

肖特基二极管

肖特基二极管

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 40A D2PAK 分立半导体产品 二极管 - 整流器 - 单

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack

SWITCHMODE Power Rectifier

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封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 40A D2PAK 分立半导体产品 二极管 - 整流器 - 单

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res