型号 功能描述 生产厂家 企业 LOGO 操作
AUIRFR4105ZTR

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

Infineon

英飞凌

Advanced Planar Technology Low On-Resistance

文件:244.23 Kbytes Page:12 Pages

IRF

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

true one-port, surface-acoustic-wave (SAW) resonator

文件:58.89 Kbytes Page:3 Pages

ACT

AUIRFR4105ZTR产品属性

  • 类型

    描述

  • 型号

    AUIRFR4105ZTR

  • 功能描述

    MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-30 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VB
25+
TO-252
5000
原装正品,欢迎来电咨询!
Infineon/英飞凌
24+
DPAK
25000
原装正品,假一赔十!
IR
18+
SOT252
375
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
TO-252
500810
免费送样原盒原包现货一手渠道联系
INTERNATIONALRECTIFIER
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
Infineon/英飞凌
21+
DPAK
6820
只做原装,质量保证
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
INTERNATIONALRECTIFIER
22+
N/A
12245
现货,原厂原装假一罚十!
Infineon/英飞凌
23+
DPAK
10000
原装正品,支持实单
IR
23+
SOT252
8000
专注配单,只做原装进口现货

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