型号 功能描述 生产厂家 企业 LOGO 操作
AUIRFR4105ZTR

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

Infineon

英飞凌

Advanced Planar Technology Low On-Resistance

文件:244.23 Kbytes Page:12 Pages

IRF

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

Fairchild

仙童半导体

true one-port, surface-acoustic-wave (SAW) resonator

文件:58.89 Kbytes Page:3 Pages

ACT

AUIRFR4105ZTR产品属性

  • 类型

    描述

  • 型号

    AUIRFR4105ZTR

  • 功能描述

    MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-18 11:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
21+
DPAK
6820
只做原装,质量保证
INTERNATIONALRECTIFIER
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
INTERNATIONALRECTIFIER
22+
N/A
12245
现货,原厂原装假一罚十!
Infineon/英飞凌
24+
DPAK
6000
全新原装深圳仓库现货有单必成
IR
23+
SOT252
35000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
IR
23+
SOT252
8000
专注配单,只做原装进口现货
Infineon(英飞凌)
2447
DPAK
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
VBSEMI/台湾微碧
23+
TO252
50000
全新原装正品现货,支持订货
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!

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