Fixed Attenuators (N,BNC,TNC)

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50 ohms wide varieties standard connectors

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封装/外壳：N 型直插式模块 包装：散装 描述：RF ATTENUATOR 3DB 50OHM NTYPE RF/IF，射频/中频和 RFID 衰减器

连接器

蜂鸣器/电子讯响器

ALL DIMENSIONS ARE IN MILLIMETERS

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包装：托盘 描述：BUZZER PIEZO 12V 40MM TH 音频设备， 产品 警报器，蜂鸣器，警笛

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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