VHF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION: The ASI MRF172 is Designed for wideband large-signal output and driver stages in the 2.0-200 MHz frequency range. FEATURES: •PG= 10 dB Min. at 150 MHz • 30:1 Load VSWRCapability • Omnigold™ Metalization System

VHF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION:\nThe ASI MRF172 is Designed for wideband large-signal output and driver stages in the 2.0-200 MHz frequency range.\nFEATURES:\n•PG= 10 dB Min. at 150 MHz\n• 30:1 Load VSWRCapability\n• Omnigold™ Metalization System

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE