3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025C is 3V a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and comm

3.3V 128K X 8 CMOS SRAM (Center power and ground)

封装/外壳：32-BSOJ（0.300"，7.62mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

3.3 V 128K x 8 CMOS SRAM

静态随机存取存储器 1M, 3.3V, 12ns FAST 128K x 8 Asynch 静态随机存取存储器

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

Supports the ATmega2560, ATmega1280 and ATmega640

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STK503 User Guide

文件：704.79 Kbytes Page：17 Pages