AS7C31025B价格

参考价格:¥13.3160

型号:AS7C31025B-12TJCN 品牌:Alliance Memory 备注:这里有AS7C31025B多少钱,2025年最近7天走势,今日出价,今日竞价,AS7C31025B批发/采购报价,AS7C31025B行情走势销售排行榜,AS7C31025B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31025B

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B

3.3V 128K X 8 CMOS SRAM (Center power and ground)

ETC

知名厂家

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

封装/外壳:32-BSOJ(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

Alliance

3.3 V 128K x 8 CMOS SRAM

ETC

知名厂家

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

Alliance

3.3 V 128K x 8 CMOS SRAM

ETC

知名厂家

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025C is 3V a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and comm

ALSC

STK503 User Guide

文件:704.79 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Supports the ATmega2560, ATmega1280 and ATmega640

文件:704.79 Kbytes Page:17 Pages

Atmel

爱特梅尔

AS7C31025B产品属性

  • 类型

    描述

  • 型号

    AS7C31025B

  • 制造商

    ALSC

  • 制造商全称

    Alliance Semiconductor Corporation

  • 功能描述

    3.3V 128K X 8 CMOS SRAM(Center power and ground)

更新时间:2025-11-20 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Alliance Memory
24+
SOJ32
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ALLINCE
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
ALLIANCE
2016+
SOJ
8880
只做原装,假一罚十,公司可开17%增值税发票!
Alliance Memory Inc.
22+
32SOJ
9000
原厂渠道,现货配单
ALLIANCE
原厂封装
9800
原装进口公司现货假一赔百
ALLTANCE
23+
SSOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ALLI
23+
NA
381
专做原装正品,假一罚百!
ALLIANCE
24+
SOJ32
12
Alliance
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Alliance Memory
2021+
SOJ-32
499

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