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位置：首页 > IC中文资料第8833页 > AS7C31025

AS7C31025价格

参考价格：￥60.5228

型号：AS7C31025A-10JC 品牌：Alliance Semi 备注：这里有AS7C31025多少钱，2026年最近7天走势，今日出价，今日竞价，AS7C31025批发/采购报价，AS7C31025行情走势销售排行榜，AS7C31025报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31025

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-12JC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-12JI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-12TC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-12TI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-12TJC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-12TJI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-15JC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-15JI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-15TC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-15TI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-15TJC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-15TJI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-20JC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-20JI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-20TC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-20TI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-20TJC

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025-20TJI

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

ALSC

AS7C31025A-10JC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-10JI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-10TC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-10TI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-10TJC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-10TJI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-12JC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-12JI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-12TC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-12TI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-12TJC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-12TJI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-15JC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-15JI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-15TC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-15TI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-15TJC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-15TJI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-20JC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-20JI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-20TC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-20TI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-20TJC

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025A-20TJI

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

ALSC

AS7C31025B

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10JC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10JCN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10JI

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10JIN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10TJC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10TJCN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10TJI

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10TJIN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12JC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12JCN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12JI

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12JIN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12TJC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12TJCN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12TJI

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-12TJIN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025产品属性

  • 类型

    描述

  • 型号

    AS7C31025

  • 制造商

    ALSC

  • 制造商全称

    Alliance Semiconductor Corporation

  • 功能描述

    5V/3.3V 128K x8 CMOS SRAM(Revolutionary pinout)

AS7C31025供应商更多...

更新时间：2026-8-1 13:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市河锋鑫科技有限公司
AS7C31025C12TJINTR
Alliance Memory Inc.
22+
32SOJ
9000
原厂渠道,现货配单
询价
深圳市宇创芯科技有限公司
AS7C31025B-12JIN
Alliance Memory
24+
SOJ-32
16508
原装正品现货支持实单
询价
深圳市正纳电子有限公司
AS7C31025B-10JCN
ALLIANCE
26+
SRAM
205
1Mb, SRAM, 128K x 8, 3.3V, 32pin 400 mil SOJ, 10ns
询价
深圳市华来深电子有限公司
AS7C31025-15JC
ALLIANC
23+
SOJ-32
8560
受权代理!全新原装现货特价热卖!
询价
深圳市博中泰实业有限公司
AS7C31025B-15TJC
ALLINCE
25+
SOJ32
90000
全新原装现货
询价
深圳市东来宝电子科技有限公司
AS7C31025B-15TJC
ALLINCE
24+
SOJ32
21574
郑重承诺只做原装进口现货
询价
深圳市科恒伟业电子有限公司
AS7C31025-12JC
ALLIANCE
2450+
SOJ32
8850
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市华斯顿科技有限公司
AS7C31025-15TJC
ALLIANCE
25+23+
SOJ
37277
绝对原装正品全新进口深圳现货
询价
深圳市坤融电子科技有限公司
AS7C31025B-15TJC
ALLINCE
2025+
SOJ32
5000
原装进口价格优 请找坤融电子!
询价
深圳市福安瓯科技有限公司
AS7C31025-15JC
ALLIANCE
25+
SOJ
3982
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价

AS7C31025芯片相关品牌

AS7C31025规格书下载地址

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