型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31025B-10TJC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

Alliance

3.3 V 128K x 8 CMOS SRAM

ETC

知名厂家

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

Alliance

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

ALSC

AS7C31025B-10TJC产品属性

  • 类型

    描述

  • 型号

    AS7C31025B-10TJC

  • 制造商

    ALSC

  • 制造商全称

    Alliance Semiconductor Corporation

  • 功能描述

    3.3V 128K X 8 CMOS SRAM(Center power and ground)

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Alliance Memory
24+
SOJ44
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ALLI
23+
NA
1134
专做原装正品,假一罚百!
ALLIANCE
24+
SOJ32
12
Alliance
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ALLIANCE
原厂封装
9800
原装进口公司现货假一赔百
Alliance Memory Inc.
23+
32SOJ
9000
原装正品,支持实单
Alliance Memory
2447
SOJ-32
315000
22个/管一级代理专营品牌!原装正品,优势现货,长期
ALLIANCE
23+
SOJ
12800
公司只有原装 欢迎来电咨询。
ALLIANCE
0412+
SOJ
16
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ALLIANCE
23+origianl
SRAM
1506
1Mb, SRAM, 128K x 8, 3.3V, 32pin 300 mil SOJ, 10ns

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