1 MEG x 16 DRAM

文件：195.31 Kbytes Page：22 Pages

1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functional description The AS4LC2M8S1 and AS4LC1M16S1 are high-performance 16-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 1,048,576 words × 8 bits × 2 banks (2048 rows × 512 columns) and 524,288 words × 16 bits × 2 banks (2048 rows × 256 columns), respective

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functional description The AS4LC2M8S1 and AS4LC1M16S1 are high-performance 16-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 1,048,576 words × 8 bits × 2 banks (2048 rows × 512 columns) and 524,288 words × 16 bits × 2 banks (2048 rows × 256 columns), respective

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

3.3V 2M x 8/1M x 16 CMOS synchronous DRAM

Functional description The AS4LC2M8S1 and AS4LC1M16S1 are high-performance 16-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 1,048,576 words × 8 bits × 2 banks (2048 rows × 512 columns) and 524,288 words × 16 bits × 2 banks (2048 rows × 256 columns), respective

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address • All signals referenced to positive edge of clock, fully synchronous • Dual internal banks controlled by A11 (bank sel

1 MEG x 16 DRAM

文件：195.31 Kbytes Page：22 Pages

3V 1M x 16 CMOS DRAM (EDO)

3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM