型号 功能描述 生产厂家&企业 LOGO 操作
AS4LC1M16E5

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

3V1MX6CMOSDRAM(EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

EDODRAM

GENERALDESCRIPTION The1Megx16isarandomlyaccessed,solid-statememorycontaining16,777,216bitsorganizedinax16configuration. FEATURES •JEDEC-andindustry-standardx16timing,functions,pinouts,andpackages •High-performanceCMOSsilicon-gateprocess •Singlepowersupply(+

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

AS4LC1M16E5产品属性

  • 类型

    描述

  • 型号

    AS4LC1M16E5

  • 功能描述

    3V 1M X 6 CMOS DRAM(EDO)

更新时间:2024-5-24 19:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ALLIANCESEMICONDUCTOR
TSOP44
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
ALLIANCE
23+
TSSOP44
20000
原厂原装正品现货
ALLIANCE
23+
CDIP
18000
ALLIANCE
17+
TSOP44
9988
只做原装进口,自己库存
DLZ
22+
TSOP
354000
ALLI
2020+
原厂封装
350000
100%进口原装正品公司现货库存
ALLAIAN
SOJ
37526
只做原装货值得信赖
ALLIANCE
23+
NA/
3277
原装现货,当天可交货,原型号开票
ALLIANCE
2339+
TSOP
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
ALLIANCE
21+
TSOP
6000
全新原装 现货 价优

AS4LC1M16E5芯片相关品牌

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  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

AS4LC1M16E5数据表相关新闻