3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M x 16 CMOS DRAM (EDO)

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

3V 1M X 6 CMOS DRAM (EDO)

[Alliance Semiconductor] Functional description The AS4LC1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high spe

EDO DRAM

GENERAL DESCRIPTION The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance CMOS silicon-gate process • Single power supply (+