GU (General Use)-E-Type [1,2-Channel (Form A) 5,6-Pin Type]

FEATURES 1. Low cost type. 2. Reinforced insulation 5,000V type (DIP type) More than 0.4mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation) 3. Various package design (DIP4, SOP4, DIP8, SOP8 packages are available) 4. High sensiti

封装/外壳：8-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 400MA 0-60V 继电器 固态继电器

封装/外壳：8-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 400MA 0-60V 继电器 固态继电器

固态继电器(MOS输出)

GU (General Use)-E-Type [1,2-Channel (Form A) 5,6-Pin Type]

FEATURES 1. Low cost type. 2. Reinforced insulation 5,000V type (DIP type) More than 0.4mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation) 3. Various package design (DIP4, SOP4, DIP8, SOP8 packages are available) 4. High sensiti

GU (General Use)-E-Type [1,2-Channel (Form A) 5,6-Pin Type]

FEATURES 1. Low cost type. 2. Reinforced insulation 5,000V type (DIP type) More than 0.4mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation) 3. Various package design (DIP4, SOP4, DIP8, SOP8 packages are available) 4. High sensiti

固态继电器(MOS输出)

固态继电器(MOS输出)

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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